Gate Driver ICs have a variety of configurations (high side, low side, half. Full Bridge Drivers Three Phase Drivers Driver Boards Gate Driver Support ICs.

Microchip Technology MIC4606 85V Full Bridge MOSFET Drivers Microchip Technology MIC4606 85V Full Bridge MOSFET Drivers offer adaptive dead time and shoot-through protection. MIC4606's adaptive dead-time circuitry constantly monitors both sides of the full-bridge. This design minimizes the time between high-side and low-side MOSFET transitions, which in turn maximizes power efficiency. Antishoot-through circuitry prevents erroneous inputs and noise from turning both MOSFETs of each side of the bridge on at the same time. With a wide operating supply range of 5.5V to 16V, the MIC4606 maximizes system efficiency.

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When using battery-powered applications, the 5.5V operating voltages enable longer run times. In addition, the MIC4606's adjustable gate drive moves the gate drive voltage to V DD for optimal MOSFET R DS(ON), which minimizes power loss due to the MOSFET's R DS(ON). MIC4606 offers 235μA total quiescent current for low power consumption, fast 35ns propagation times, and drives an 1000pF load with 20ns rise and fall times. The MC4606-1 includes four independent inputs whereas the MIC4606-2 uses two PWM inputs, one for each side of the H-bridge.

The MIC4606-1 and MIC4606-2 are available in a 16-pin 4mmx4mm QFN package with an operating temperature range of -40°C to 125°C.

The A4957 is a full-bridge controller for use with external N-channel power MOSFETs and is specifically designed for applications with high-power inductive loads such as brush DC motors. A unique charge pump regulator provides full ( >10 V ) gate drive for battery voltages down to 7 V and allows the A4957 to operate with a reduced gate drive, down to 4.5 V.

A bootstrap capacitor is used to provide the above battery supply voltage required for N-channel MOSFETs. A unique bootstrap charge management system ensures that the bootstrap capacitor is always sufficiently charged to supply the high-side gate drive circuit. Each of the power MOSFETs is controlled independently but all are protected from shoot-through by dead time that is userconfigured by an external resistor. Integrated diagnostics provide indication of undervoltage and overtemperature faults. The A4957 is supplied in a 24-contact 4 mm × 4 mm × 0.75 mm QFN with an exposed pad for enhanced thermal dissipation. It is lead (Pb) free, with 100% matte tin leadframe plating (suffix –T).